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SSM3K309T
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K309T
Power Management Switch Applications High-Current Switching Applications
* * 1.8V drive Low on-resistance : Ron = 47m (max.) (@VGS = 1.8V) : Ron = 35m (max.) (@VGS = 2.5V) : Ron = 31m (max.) (@VGS = 4.0V) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 12 4.7 9.4 700 150 -55~150 Unit V V A mW C C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm2)
JEDEC JEITA TOSHIBA Weight:
2-3S1A
10mg (typ.)
Electrical Characteristics (Ta = 25C)
Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth |Yfs| RDS (ON) Ciss Coss Crss ton toff VDSF Turn-on time Turn-off time Test Condition ID = 1 mA, VGS = 0 ID = 1 mA, VGS = -12 V VDS =20 V, VGS = 0 VGS = 12 V, VDS = 0 VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 4.0A ID = 4.0 A, VGS = 4.0 V Drain-source ON-resistance ID = 3.0 A, VGS = 2.5 V ID = 1.0 A, VGS = 1.8 V Input capacitance Output capacitance Reverse transfer capacitance Switching time (Note2) (Note2) (Note2) (Note2) Min 20 12 0.35 13 (Note2) Typ. 25 22 25 30 1020 175 160 23 34 -0.85 Max 1 1 1.0 31 35 47 -1.2 pF pF pF ns V m Unit V A A V S
VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, ID = 2A VGS = 0~2.5 V, RG = 4.7 ID = -4.7 A, VGS = 0
Drain-source forward voltage
Note2: Pulse test
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SSM3K309T
Switching Time Test Circuit
(a) Test Circuit
2.5 V 0 10 s OUT
(b) VIN
2.5 V 90% 10%
IN RG
VDD
VDD = 10 V RG = 4.7 < D.U. = 1% VIN: tr, tf < 5 ns Common source Ta = 25C
0V VDD
(c) VOUT
VDS (ON) ton tr
90% 10% tf toff
Marking
3
Equivalent Circuit (top view)
3
KDM
1 2 1 2
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.
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SSM3K309T
10
ID - VDS
4.0 V 2.5 V 1.8 V 1.5 V 10 Common Source VDS = 3 V
ID - VGS
(A)
8
ID
6
ID
(A)
1
Drain current
0.1 Ta = 100 C 0.01 25 C 0.001 - 25 C
4 VGS = 1.2 V 2 Common Source Ta = 25 C 0 0.2 0.4 0.6 0.8 1.0
0
Drain current
0.0001 0
1.0
2.0
Drain - Source voltage
VDS
(V)
Gate - Source voltage
VGS (V)
RDS (ON) - VGS
100 ID =4.0A 100
RDS (ON) - ID
Common Source Ta = 25C
Drain - Source on-resistance RDS (ON) (m)
Drain - Source on-resistance RDS (ON) (m)
Common Source
50 25 C Ta = 100 C
50 1.8 V 2.5 V VGS = 4.0 V 0
- 25 C 0 0 2 4 6 8 10
0
2
4
6
8
10
Gate - Source voltage
VGS (V)
Drain current
ID
(A)
RDS (ON) - Ta
100
Vth - Ta
1.0 Common Source VDS = 3 V 0.8 ID = 1 mA
Drain - Source on-resistance RDS (ON) (m)
Gate threshold voltage
Vth (V)
1.0 A / 1.8 V ID = 4.0 A / VGS = 4.0 V
Common Source
0.6
50
3.0 A / 2.5 V
0.4
0.2
0 -50
0 0 50 100 150 -50 0 50 100 150
Ambient temperature
Ta
(C)
Ambient temperature
Ta
(C)
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SSM3K309T
|Yfs| - ID (S)
30 Common Source 10 Common Source
VGS = 0 V Ta = 25 C
IDR - VDS
(A)
Yfs
10 VDS = 3 V Ta = 25 C 3 1
IDR
1 G 0.1 S
D IDR
Forward transfer admittance
0.3 0.1
Drain reverse current
0.01 100 C 0.001 25 C -25 C
0.03 0.01 0.001
0.01
0.1
1
10
0.0001 0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Drain current
ID
(A)
Drain-Source voltag
VDS
(V)
5000 3000
C - VDS
t - ID
1000 toff Common Source VDD = 10 V VGS = 0 2.5 V Ta = 25 C RG = 4.7
(pF)
(ns)
Ciss 1000
tf 100
C
Capacitance
300
Coss Crss Common Source
Switching time
t
ton 10 tr
100
30
Ta = 25 C f = 1 MHz VGS = 0 V 1 10 100 1 0.01 0.1 1 10
10 0.1
Drain - Source voltage
VDS
(V)
Drain current
ID
(A)
rth - tw
1000
PD - Ta Drain power dissipation PD (mW)
1000 a: Mounted on FR4 board (25.4mm x 25.4mm x 1.6t , Cu Pad : 645 mm2) b: Mounted on FR4 board (25.4mm x 25.4mm x 1.6t , Cu Pad : 0.8 mm2x3) b
Transient thermal impedance Rth (C/W)
800 a
100
a
600
10
Single Pulse a: Mounted on FR4 board (25.4mm x 25.4mm x 1.6t , Cu Pad : 645 mm2) b: Mounted on FR4 board (25.4mm x 25.4mm x 1.6t , Cu Pad : 0.8 mm2x3)
400
b
200
1 0.001
0.01
0.1
1
10
100
1000
0 -40
-20
0
20
40
60
80
100 120 140 160
Pulse width
tw
(s)
Ambient temperature
Ta
(C)
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SSM3K309T
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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